With a stressed film, defects such as dislocations, voids, and cracking may occur. The FLX stress measurement system helps troubleshoot applications listed below:
- Aluminum stress-induced voids
- Passivation cracking (nitride, oxide)
- Stress-induced dislocations in silicon
- Electrical test yield degradation
- Tungsten silicide cracking
- Stress increase in oxides during temperature cycling
- Constant current stress test (CCST) degradation
- Matching metallization expansion on GaAs
- Silicon cracking due to high film stress